| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a loss caused by reflection of light generating in a scintillator element at an emitting surface of the scintillator element, increase incident light to a semiconductor photodetection element, and improve an output. <P>SOLUTION: An antireflection coating of alternate multi-laminates of two different metal oxide coatings is directly formed in vacuum on a surface of the scintillator element facing the semiconductor photodetection element, thereby the loss caused by reflection of light generating at the surface of the scintillator element facing the semiconductor photodetection element is reduced, and the light amount incident to the semiconductor photodetection element can be increased by 10% and the radiation detector can be provided to obtain images with high resolution. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
