发明名称 MANUFACTURING METHOD OF PROBE
摘要 PROBLEM TO BE SOLVED: To easily and stably manufacture a desired probe needle having a sharp chip with extremely high accuracy and high yield, and properly perform an electrical characteristic inspection of a transistor, for example, in 45 nm technology. SOLUTION: The surface of a W line 1 is purified by applying direct current, for example, in the range of from 0.8-1.0 A, and preferably from 0.8-0.9 A to the W line 1 in an oxidation resistant atmosphere such as nitrogen (N<SB>2</SB>) atmosphere by current control by a current control unit 12 to remove fine impurities, such as dust, adhering to the surface of the W line 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009210430(A) 申请公布日期 2009.09.17
申请号 JP20080053921 申请日期 2008.03.04
申请人 FUJITSU MICROELECTRONICS LTD 发明人 NISHIUMI TOSHIYA;NAGANO OSAMI
分类号 G01R1/067 主分类号 G01R1/067
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