METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can accurately transfer an electric charge at low power consumption. SOLUTION: The method includes: a step to form a channel 12 in a semiconductor substrate 11; a step to form a barrier area 15 under a plurality of transfer electrodes 14 which are provided on an embedded channel 12 at specified spaces; a step to form a sidewall 20 in the same direction as the transfer direction of the electric charge 17 on both ends of the transfer electrode 14 at such inclination that the sidewall becomes thin toward the transfer direction of the electric charge 17; a step to form an n-type conductive type second impurity area 16 by using the transfer electrode 14 and the sidewall 20 as a mask; and a step to remove the sidewall 20. Potential generated by the barrier area 15 is made shallower than that formed by the embedded channel 12, and potential formed by the second impurity area 16 has inclination which becomes deep in the transfer direction of the electric charge 17. COPYRIGHT: (C)2009,JPO&INPIT