| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a P-channel type nonvolatile semiconductor memory device capable of mitigating disturb stress. <P>SOLUTION: The nonvolatile semiconductor memory device is provided with an N-type well formed on a semiconductor substrate, a first P+ region and a second P+ region which are formed on the surface of the N-type well respectively with a predetermined interval, a plurality of memory cell arrays, having a tunnel insulating film, a charge storage layer, a first gate insulating film and a first gate electrode extending into a first direction on a first channel region between the first and second P+ regions of the N-type well while being arranged in a matrix, a first wiring arranged in a second direction orthogonal to the first direction and connected to the first P+ region and a second wiring arranged in the second direction and connected to the second P+ region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
