| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO semiconductor element which can suppress deterioration in the planarity of an acceptor-doped layer or in a layer formed after the acceptor-doped layer without deteriorating a concentration of an acceptor element, in the case of forming a laminated body which includes an acceptor-doped layer composed of a ZnO semiconductor. <P>SOLUTION: In the ZnO semiconductor element, an n-type Mg<SB>Z</SB>ZnO layer 2, an undoped MgZnO layer 3, an MQW active layer 4, an undoped Mg<SB>X</SB>ZnO layer 5 and an acceptor-doped Mg<SB>Y</SB>ZnO layer 6 are sequentially laminated on a ZnO substrate 1. The acceptor-doped Mg<SB>Y</SB>ZnO (0≤Y<1) layer 6 includes at least one acceptor element, and the undoped Mg<SB>X</SB>Zn<SB>1-X</SB>O (0<X<1) layer 5 is formed in contact with the layer. Therefore, the acceptor element can be sufficiently taken into the layer to be doped with the acceptor, and the surface planarity of the acceptor-doped layer is improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
