| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses a decrease in reliability by suppressing formation of a step between an insulating film buried in a groove portion and a floating gate, and a method of manufacturing the same. SOLUTION: The semiconductor device comprises LOCOS oxide films 2 formed on a silicon substrate 1, a tunnel oxide film 3 formed on the silicon substrate between the LOCOS oxide films, the floating gate 4 formed on the tunnel oxide film and LOCOS oxide films, groove portions 8 formed on the LOCOS oxide films and disposed between floating gates, an interlayer insulating film 5 buried in the groove portions and formed on the groove portions, a dielectric film 6 formed on the interlayer insulating film and floating gates, and a control gate 7 formed on the dielectric film. An upper surface of the interlayer insulating film 5 is higher than upper surfaces of the floating gates 4, and upper surface of interlayer insulating films are tapered. COPYRIGHT: (C)2009,JPO&INPIT
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