| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which is improved in operating speed and has high reliability. SOLUTION: The semiconductor storage device has a plurality of word lines WL formed with a predetermined interval on a semiconductor substrate 1, a selection transistor ST provided at an end portion of the plurality of word lines, an insulating film 11 formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film 12 formed on the insulating film 11, an insulating film 20 formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion 19 located between the word lines and surrounded by the high-permittivity film and the interlayer insulating film, and a second air-gap portion 19 formed via the insulating film 11 and the high-permittivity film 12 at a sidewall portion, which opposes the selection transistor ST, of the word line WL1 adjacent to the selection transistor ST, an upper portion of the second air-gap portion being covered by the insulating film 20. COPYRIGHT: (C)2009,JPO&INPIT
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