发明名称 |
SOI PROTECTION FOR BURIED PLATE IMPLANT AND DT BOTTLE ETCH |
摘要 |
An SOI layer has an initial trench extending therethrough, prior to deep trench etch. An oxidation step, such as thermal oxidation is performed to form a band of oxide on an inner periphery of the SOI layer to protect it during a subsequent RIE step for forming a deep trench. The initial trench may stop on BOX underlying the SOI. The band of oxide may also protect the SOI during buried plate implant or gas phase doping.
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申请公布号 |
US2009230508(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20080048291 |
申请日期 |
2008.03.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DYER THOMAS W.;HO HERBERT L.;TODI RAVI M. |
分类号 |
H01L29/94;H01L21/02 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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