发明名称 THIN FILM TRANSISTOR AND DISPLAY
摘要 A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
申请公布号 US2009230390(A1) 申请公布日期 2009.09.17
申请号 US20090392153 申请日期 2009.02.25
申请人 SONY CORPORATION 发明人 GOSAIN DHARAM PAL;TANAKA TSUTOMU;MOROSAWA NARIHIRO
分类号 H01L29/786;G02F1/1368;H01L21/336 主分类号 H01L29/786
代理机构 代理人
主权项
地址