ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

An organic thin film transistor and a manufacturing method thereof are provided to reduce the leakage current by blocking the external current by grounding the inflow current to the drain electrode site. An insulating layer(120) is formed on a gate electrode(110). An organic semiconductor layer(130) is formed on the insulating layer. A protective film(140) comprises an electrode pattern part(151) formed on the organic semiconductor layer, and exposes the organic semiconductor layer. The source and drain electrodes(161,162) are connected to the organic semiconductor layer. The protective film includes the polymer of the acrylic series. The protective film comprises a wiring pattern part branched from an electrode pattern part.