| 摘要 |
<p>A semiconductor device and method for fabricating the same are provided to make same the pattern density of the core region and cell region by forming a same dummy active region as the active area of the cell region of form in the core region. The cell region and core [region are formed in the semiconductor substrate(300). The active region(305) is formed in the cell region. The dummy active region is formed in the core region and has CD and the same pitch as the CD(Critical Dimension) and pitch of the active region. The control gate(310) is formed perpendicularly to the active area, the dummy active region. The active region and dummy active region of line-shape are formed. The active region is extended to the dummy active region.</p> |
