METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to reduce a gettering process time of a catalyst element added to a semiconductor film by performing a gettering process of the catalyst element. A bottom insulation film(11) is formed on an insulation surface of a glass substrate(10) which is transparent about a light. An amorphous semiconductor film(12) is formed on the bottom insulation film. A pulse light is irradiated on the amorphous semiconductor film in order to form a crystalline semiconductor film. The amorphous semiconductor film is crystallized. A light source maintains the most intensity of the light source for 1~5 seconds. The pulse light irradiation is performed with 2~20 times.