| 摘要 |
Bipolar transistors in complimentary MOS (CMOS) integrated circuits (ICs) (100) are often fabricated as parasitic components, in which emitters of bipolar transistors are implanted in the same processes as CMOS sources/drains, to avoid manufacturing costs associated with dedicated implants for bipolar emitters. Energies and doses of CMOS source/drain implants (116) are typically selected to optimize CMOS transistor performance, resulting in less than optimum values of bipolar parameters such as gain. CMOS ICs often include implanted resistors of a same type as the emitters of the bipolar transistors in the same ICs. This invention discloses bipolar transistors with emitters implanted by CMOS source/drain implants and resistor implants to improve bipolar transistor parameters, and a method for fabricating same.
|
