| 摘要 |
A fuse of a semiconductor device and a method for manufacturing the same are provided to prevent yield drop due to a repair error by varying the phase of crystalline and amorphous according to the magnitude of electric energy. A first metal line(210) is formed on the upper part of a semiconductor substrate(200). An interlayer dielectric(220) is formed on the first metal line. A second metal line is formed on the interlayer dielectric. A fuse(230) passes through the interlayer dielectric while connecting the first and the second metal line. The fuse is made from a phase change material such as GTS film which varies in phase when electric energy is applied to the first and the second metal line.
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