| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the deterioration of a rectification circuit by restraining stress to a transistor which is subjected to diode connection by an AC signal. <P>SOLUTION: The semiconductor device includes a semiconductor layer including a channel region, and a first region and a second region to which an impurity element is introduced to make the first region and the second region a source and a drain, a third region, and a gate electrode provided to partly overlap with the semiconductor layer with a gate insulating film interposed therebetween. In the semiconductor layer, the first region is electrically connected to the gate electrode through a first electrode to which an AC signal is input, the second region is electrically connected to a capacitor element through a second electrode, the third region is provided to overlap with the gate electrode and contains an impurity element at lower concentrations than each of the first region and the second region. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
