| 摘要 |
PROBLEM TO BE SOLVED: To reduce the area occupied by a capacitance discharge type read circuit, and to reduce power consumption. SOLUTION: A magnetic storage device includes: a plurality of MRAM memory cells 10 commonly connected to a data transfer line; a clamp transistor 22 connected between the data transfer line and a read signal line and configured to hold constant the potential of the data transfer line; and a read circuit 30 which is connected to the read signal line and which reads the storage information of the memory cell 10. The read circuit 30 includes a hold switch 31 connected between the read signal line and a read node N and configured to hold the potential of the node N, a capacitor 32 connected between the node N and a ground end, a precharging switch 33 connected between the node N and a power source and configured to charge the capacitor 32, and an inverter 35 to which the potential of the node N is input to generate a digital signal. COPYRIGHT: (C)2009,JPO&INPIT
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