Magnetic Memory Devices Including Conductive Capping Layers

摘要

A magnetic memory device includes a first magnetic layer having opposing sidewalls, a tunnel barrier layer on the first magnetic layer, the tunnel barrier layer having a top surface and having opposing sidewalls aligned with the opposing sidewalls of the first magnetic layer, and a second magnetic layer on the tunnel barrier layer, the second magnetic layer having a bottom surface that is narrower than the top surface of the tunnel barrier layer and opposing sidewalls that are spaced apart from the opposing sidewalls of the tunnel barrier layer. A conductive capping layer having opposing sidewalls aligned with the opposing sidewalls of the second magnetic layer is on the second magnetic layer.