SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device which has high electron mobility, and superior uniformity and reproducibility of the threshold voltage while reducing the gate leakage current, and can be applied in the enhancement mode. The semiconductor device sequentially deposits a lower barrier layer composed of a lattice-relaxed AlxGa1-xN (0 = x = 1), a channel layer composed of InyGa1-yN (0 = y = 1) having compressive strain, and a contact layer composed of AlzGa1-zN (0 = z = 1), and generates a two-dimensional electron gas in the vicinity of the interface with the AlzGa1-zN contact layer of the InyGa1-yN channel layer. A portion of the AlzGa1-zN contact layer is formed so that the gate electrode is embedded with an intervening insulating film in the recessed part formed by etching and removing until the InyGa1-yN channel layer is exposed, and an ohmic electrode is formed on the AlzGa1-zN contact layer. Thus, a semiconductor device which is capable of enhancement operation and has superior uniformity and reproducibility of the threshold voltage while maintaining low leakage current and high electron mobility is obtained.