SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER

摘要

The invention relates to a substrate comprising successively a base wafer (1), an insulating layer (2) and a top semiconductor layer (3), characterised in that the insulating layer (2) comprises at least a zone wherein the density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to a process for making such a substrate.