GAN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GAN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GAN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS

摘要

A GaN-based semiconductor light emitting device, a light emitting device assembly, a light emitting apparatus, a manufacturing method of the GaN-based semiconductor light emitting device, a driving method of the GaN-based semiconductor light emitting device, and an image display apparatus are provided to increase hole concentration of an active layer by forming a laminated structure body having an undoped GaN-based compound semiconductor layer. A first GaN-based compound semiconductor layer(21) is an n-type conductive type. A second GaN-based compound semiconductor layer(22) is a p-type conductive type. A first electrode(31) is electrically connected to the first GaN-based compound semiconductor layer. A second electrode(32) is electrically connected to the second GaN-based compound semiconductor layer. A dopant diffusion barrier(24) is made of undoped GaN-based compound semiconductor. The dopant diffusion barrier prevents diffusion of the p-type dopant in an active layer(23).