| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve the efficiency of write-in processing when any error is generated in storage data in a memory system configured by using a nonvolatile semiconductor storage memory. <P>SOLUTION: This memory system is provided with a DRAM which performs readout/write-in by at most cluster units and a NAND memory which performs readout/write-in by page units. When reading out the data stored in the NAND to the DRAM as well as management information including the storage position of data stored in the DRAM and the NAND, a data management part manages the data in the DRAM and the NAND on the basis of the management information stored in a bad cluster table which manages the storage position of the data whose ECC error has been generated. <P>COPYRIGHT: (C)2009,JPO&INPIT |
