发明名称 WC-SiC-Mo2C-BASED SINTERED BODY AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a WC-SiC-Mo<SB>2</SB>C-based sintered body which is improved in sinterability and toughness of WC sintered body by simultaneously adding SiC and Mo<SB>2</SB>C to WC without adding Co causing lowering of hardness and Young's modulus and further, which is improved in a high hardness, a high young's modulus, a high fracture toughness value and the like by adding Mo<SB>2</SB>C, Cr<SB>3</SB>C<SB>2</SB>and ZrC, and a method for manufacturing the same. <P>SOLUTION: The WC-SiC-Mo<SB>2</SB>C-based sintered body is obtained by sintering a mixed powder of 1-30 mol% SiC powder, 0.001-20 mol% Mo<SB>2</SB>C powder, a balance WC and an inevitable impurity. A method for manufacturing WC-SiC-Mo<SB>2</SB>C-based sintered body is characterized in that a mixed powder containing 1-30 mol% SiC powder, 0.001-20 mol% Mo<SB>2</SB>C powder, and at least one selected from 0.001-1 mol% Cr<SB>3</SB>C<SB>2</SB>powder, 0.001-1.0 mol% VC powder, 0.001-5 mol% ZrC powder or 0.001-5 mol% NbC powder, the balance WC and the inevitable impurity is sintered at 1,550-1,750&deg;C. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009209022(A) 申请公布日期 2009.09.17
申请号 JP20080055999 申请日期 2008.03.06
申请人 AKITA PREFECTURE 发明人 YASUMATSU HITOSHI;SUGIYAMA SHIGEAKI
分类号 C04B35/56;B23B27/14 主分类号 C04B35/56
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