| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element having a positive electrode at one side of a nitride-based semiconductor laminated structure and a negative electrode at the other side and a method for manufacturing the nitride-based semiconductor light-emitting element. <P>SOLUTION: The nitride-based semiconductor light-emitting element includes: a holding substrate (10) including a metallic layer region (2) and a resin layer region (3); a nitride-based semiconductor laminated structure (30) including p-type nitride-based semiconductor layers (31, 32) successively laminated on the holding substrate, an active layer (33) and an n-type nitride-based semiconductor layer (34); and a p-type ohmic electrode (20) brought into ohmic-contact with the p-type nitride-based semiconductor layer between the holding substrate and the p-type nitride-based semiconductor layer. A metallic layer region included in the holding substrate is electrically conducted through the p-type ohmic electrode to the p-type nitride-based semiconductor layer, and the peripheral edge of the nitride-based semiconductor laminated structure (30) is retreated from the peripheral edge to the inside of the holding substrate (10). <P>COPYRIGHT: (C)2009,JPO&INPIT |
