| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor growth using inexpensive aluminum halide as a precursor of aluminum-oxide thin film, and a method for manufacturing the aluminum-oxide thin film. SOLUTION: The raw material for chemical vapor growth composed of an aluminum halide compound expressed by general formula (1), and an organic compound having a cyano group expressed by general formula (2) is used as the raw material for chemical vapor growth. In the formulas, X denotes a halogen atom; R denotes a 1-10C hydrocarbon group; n denotes 1 or 2. COPYRIGHT: (C)2009,JPO&INPIT
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