SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to prevent a crack of a pad electrode due to stress by supporting an edge of a through hole by a passivation film. An electrode layer(14) is arranged on a first main side of a semiconductor substrate(10). A semiconductor circuit(12) is formed on the semiconductor substrate. An insulation layer has an opening part(16A) which exposes a part of the electrode layer. A through hole(22) exposes a part of the electrode layer. The through hole is positioned in an outer side of an edge of the opening part. The through hole is passed from a second main side of the semiconductor substrate to thickness direction.