| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection-type mask which has a reduced shadowing effect and is capable of phase shift exposure with sufficient shading frame performance. <P>SOLUTION: The mask includes: a substrate; a multilayer reflective film which is formed on the substrate; a light-absorber layer which is formed on the multilayer reflective film, and has a phase shift function to emit a part of a given exposure light as a first reflection light and to make the phase of the first reflection light different from that of a second reflection light where the exposure light is emitted to the multilayer reflective film and is reflected thereon; a circuit pattern region formed in the light-absorber layer; and a shading region which is formed outside the circuit pattern region and has a reflectance with respect to the exposure light lower than that in the light-absorber layer located in the circuit pattern region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
