| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that, when an integrated circuit having an interlayer insulation film built up on top of a wiring layer is subjected to heat treatment, it is possible that the interlayer insulation film will rupture in a portion wherein a narrow gap section between wirings and a wide opening section contiguous therewith are connected. SOLUTION: The angle section of the wiring 4b positioned at a connecting section between the gap section 10 and the opening section 12 is chamferred, and the end section 62 of the gap section 10 is formed in a fan shape towards the opening section 12. The interlayer insulation film is deposited on the wiring layer patterned in this manner. The interlayer insulation film can form a cavity at the position owing to a narrow trench of the gap section 10. Any discontinuity in the connecting section of the gap section 10 and the opening section 12 is mitigated regarding the deposition of the interlayer insulation film by forming the end section 62, the end of the cavity of the gap section 10 is difficult to be sealed by the interlayer insulating film and the rupture of the interlayer insulation film with an increasing atmospheric pressure of the cavity during heat treatment is suppressed. COPYRIGHT: (C)2009,JPO&INPIT |
