| 摘要 |
PROBLEM TO BE SOLVED: To suppress a forming voltage while maintaining a resistance change material film at a film thickness capable of securing the reliability of operation, in a miniaturized resistance changing element. SOLUTION: A resistance change type memory is composed of the resistance changing element including a resistance changing layer sandwiched between a pair of electrodes. The resistance changing layer includes a lamination of a polycrystalline oxide film and an amorphous oxide film thicker than the polycrystalline oxide film. COPYRIGHT: (C)2009,JPO&INPIT
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