| 摘要 |
PROBLEM TO BE SOLVED: To fully satisfy different requests to a first capacitor of increased capacity, microfabrication and low voltage, and to a second capacitor of increased capacity and high breakdown voltage, in a semiconductor device on which the first capacitor acting as a memory capacitor in a memory cell and the second capacitor other than the memory capacitor are mixed-mounted. SOLUTION: This device includes the first capacitor 30 used for a storage capacity of information which is configured by sandwiching a ferroelectric film 45 between a lower electrode 51 and an upper electrode 52, and the second capacitor 50 used for a capacity other than the storage capacity which is configured by sandwiching a ferroelectric film 64 between a lower electrode 66 and an upper electrode 67. The first capacitor 30 and the second capacitor 50 are formed at layer positions, respectively, where heights from the surface of a semiconductor substrate 10 are different from each other. COPYRIGHT: (C)2009,JPO&INPIT |
