| 摘要 |
A method is provided of forming a trench isolation region adjacent to a single-crystal semiconductor region for a transistor. Such method can include, for example, recessing a single-crystal semiconductor region to define a first wall of the semiconductor region, a second wall remote from the first wall and a plurality of third walls extending between the first and second walls, each of the first and second walls extending in a first direction. In one embodiment, the first direction may be a <110> crystallographic direction of a wafer such as a silicon direction, for example. Oxidation-inhibiting regions can be formed at the first and second walls of the semiconductor region selectively with respect to the third walls. A dielectric region can then be formed adjacent to the first, second and third walls of the semiconductor region for a trench isolation region. During the formation of the dielectric region, the oxidation-inhibiting regions reduce oxidation of the semiconductor region at the first and second walls relative to the plurality of third walls. A transistor formed in the semiconductor region can have a channel whose length is oriented in the first direction by processing including annealing, which at least partially oxidizes the semiconductor region at the third walls.
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