发明名称 SPUTTERING CATHODE, SPUTTERING APPARATUS PROVIDED WITH SPUTTERING CATHODE, FILM-FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
摘要 The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality of magnet units arranged at positions opposite to the rear surface of the target and a distance adjusting mechanism for separately adjusting a distance between the target and a magnet unit for each magnet unit. In addition, the sputtering cathode includes a reciprocating movement mechanism for reciprocating a plurality of magnet units in parallel to the rear surface of the target. The plurality of magnet units, the distance adjusting mechanism and the reciprocating movement mechanism may be housed in a magnet chamber that can be evacuated.
申请公布号 US2009229970(A1) 申请公布日期 2009.09.17
申请号 US20090397882 申请日期 2009.03.04
申请人 CANON ANELVA CORPORATION 发明人 ITAGAKI KATSUNORI;UCHIYAMA TOMOO;HARI YASUKO;SAITO HIROAKI;CHIBA TOSHINOBU
分类号 C23C14/54;C23C14/35 主分类号 C23C14/54
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