NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT
摘要
<p>Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.</p>
申请公布号
WO2009114162(A1)
申请公布日期
2009.09.17
申请号
WO2009US01573
申请日期
2009.03.11
申请人
MICRON TECHNOLOGY, INC.;LIU, JUN;VIOLETTE, MICHAEL, P.