SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method comprising a first step of forming an ion implantation mask (103) in a partial region of the surface of a semiconductor (102), a second step of implanting ions of a first dopant into at least a part of the exposed region of the surface of the semiconductor (102) other than the region where the ion implantation mask (103) is formed and forming a first dopant implantation region (106), a third step of removing a part of the ion implantation mask (103) after the formation of the first dopant implantation region (106) to enlarge the exposed region of the surface of the semiconductor (102), and a fourth step of implanting ions of a second dopant into at least a part of the enlarged exposed region of the surface of the semiconductor (102) to form a second dopant implantation region (107).