THIN FILM TRANSISTOR AND DISPLAY

摘要

A thin film transistor and a display device are provided to prevent incidence of a light in an active layer by making a distance of a light absorbing layer and the active layer close. A first insulation film(52A) is formed between a gate electrode(51) and an active layer(53). A first light absorbing layer(52B) is made of material which absorbs a light less than 420nm. A gate insulation film has a second insulation film(52C) prepared between the first light absorbing layer and the active layer. The first insulation film and the second insulation film are formed by at least one side of silicon oxide and silicon nitride. The first light absorbing layer is formed by amorphous silicon. Thickness of the first light absorbing layer is 10~100nm.