METHOD MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to reinforce a linear nitride film formed in a peripheral region by forming a double linear nitride film in the peripheral region of a semiconductor substrate. A trench is formed inside a semiconductor substrate(200). A first nitride film(251) is formed on a surface of the trench. A second nitride film(252) is formed on the first nitride film. An insulation film(280) is filled inside the trench in which the second nitride film is formed. The first nitride film is formed by a plasma nitriding process. The plasma nitriding process is performed in a single chamber or a furnace batch type.