| 发明名称 |
Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device |
| 摘要 |
The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented. <IMAGE> |
| 申请公布号 |
EP1304186(B1) |
申请公布日期 |
2009.09.16 |
| 申请号 |
EP20020021768 |
申请日期 |
2002.09.25 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA, KOICHIRO;MIYAIRI, HIDEKAZU;SHIGA, AIKO;SHIMOMURA, AKIHISA;ISOBE, ATSUO |
| 分类号 |
B23K26/06;H01L21/20;B23K26/073;G02B27/09;H01L21/265;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01S3/00;H01S3/10 |
主分类号 |
B23K26/06 |
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