发明名称 |
Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
摘要 |
<p>A semiconductor light emitting device includes: an upper growth layer (39) including a light emitting layer (32); a transparent substrate (10) through which a radiant light from the light emitting layer passes; and a foundation layer (23) provided between the upper growth layer (39) and the transparent substrate (10), the foundation layer (23) having a surface-controlling layer (22) and a bonding layer (20) bonded with the transparent substrate (10). The surface-controlling layer (22) is made of compound semiconductor including at least Ga and As. The upper growth layer (39) is formed on an upper surface of the surface-controlling layer (22). A lattice constant difference at an interface between the surface-controlling layer (22) and the upper growth layer (39) is smaller than that at an interface (15) between the bonding layer (20) and the transparent substrate (10).</p> |
申请公布号 |
EP2101361(A2) |
申请公布日期 |
2009.09.16 |
申请号 |
EP20090003211 |
申请日期 |
2009.03.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAEKI, RYO;KONDO, KATSUFUMI;IDEI, YASUO |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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