| 摘要 |
A mask for an extreme ultraviolet lithography and a forming method thereof are provided to implement a pattern below 32 nm stably by suppressing the increase of the foreign body due to a multi layer structure. A multilayer reflective layer(120) is formed on a substrate(110) and reflects the extreme ultraviolet ray. An absorption pattern(151) is formed on the multilayer reflective layer and exposes the multilayer reflective layer selectively. A reflective spacer(171) is formed in a sidewall of the absorption layer pattern and increases the reflection of the extreme ultraviolet ray irradiated to the multilayer reflective layer. The multilayer reflective layer is formed by repeatedly stacking a dual layer of the molybdenum and the silicon. The absorption layer pattern includes TaBN and TaBO layers. |
