| 摘要 |
A semiconductor device is provided to reduce a pitch width between active layers by making direction of a current in a first transistor and a second transistor reverse. A first transistor and a second transistor are formed by a plurality of pin transistors. The first transistor and the second transistor are parallel connected in order to electrically share a source. A plurality of pin transistors is protruded on a semiconductor substrate, and forms a channel region. A plurality of pin transistors includes a pin active layer(11). A source layer(19) is formed in one end of the pin active layer. A drain layer(18) is formed in the other end of the pin active layer. Each pin active layer is parallel adjacent each other. A gate electrode(13) is formed on each pin active layer through an insulation film.
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