SEMICONDUCTOR DEVICE USING A ZIRCONIUM CARBON OXYNITRIDE INSULATION LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for a zirconium carbon oxynitride insulation film, a semiconductor device using the same, and a manufacturing method thereof are provided to increase capacity of a device per unit area by excluding an electrode film of a wide dimension. A bottom electrode(180) is formed on a semiconductor substrate(100). A zirconium organic nitrogen source is absorbed on the bottom electrode. A non-reactive source is removed from the zirconium organic nitrogen. A zirconium carbon oxynitride layer is formed by supplying an oxidizer gas to the zirconium organic nitrogen absorption layer. The non-reactive oxidizer is removed. A nitriding agent is supplied to the zirconium carbon oxynitride layer. A top electrode(195) is formed on the zirconium carbon oxynitride layer.