发明名称
摘要 Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu-Ni-Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850MPa.
申请公布号 JP4331727(B2) 申请公布日期 2009.09.16
申请号 JP20050516556 申请日期 2004.11.30
申请人 发明人
分类号 C23C14/34;H01J37/34;H01L21/285 主分类号 C23C14/34
代理机构 代理人
主权项
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