| 摘要 |
A method for forming a contact of a semiconductor device is provided to prevent the deposition failure of a barrier layer due to the misalignment by forming a post second barrier layer after forming a first barrier layer by nitriding the exposed interlayer dielectric. A contact pad(101) is formed on a semiconductor substrate(100). An insulating layer(104) is formed on the overall structure including the contact pad. The contact hole exposing the contact pad is formed by etching the insulating layer. A first barrier layer(107) is formed in a lower part and a side of the contact hole by performing a plasma process. A contact plug(109) is formed in the contact hole including the first barrier layer. The thermal process is performed after the plasma process.
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