| 摘要 |
[PROBLEMS] To provide a resistance change element, which can render the amount of current flown per cell smaller than that in the prior art technique, and a method for manufacturing the same. [MEANS FOR SOLVING PROBLEMS] A resistance change memory (ReRAM) for storing data by taking advantage of a change in resistance of a resistance change element (70), wherein the resistance change memory comprises a lower electrode (a ground-side electrode) (67a) of the resistance change element (70) formed of a transition metal such as Ni, and an upper electrode (a positive electrode-side electrode) (69a) formed of a noble metal such as Pt. A transition metal oxide film (68a) is provided between the lower electrode (67a) and the upper electrode (69a). The transition metal oxide film (68a) is, for example, an oxide film of a transition metal of the same type as the transition metal constituting the lower electrode (67a) (NiOx film).
|
