发明名称 |
HERSTELLUNGSVERFAHREN FÜR FINFETS MIT VERRINGERTEM WIDERSTAND |
摘要 |
In a first aspect, a first method of manufacturing a finFET is provided. The first method includes the steps of (1) providing a substrate; and (2) forming at least one source/drain diffusion region of the finFET on the substrate. Each source/drain diffusion region includes (a) an interior region of unsilicided silicon; and (b) silicide formed on a top surface and sidewalls of the region of unsilicided silicon. Numerous other aspects are provided. |
申请公布号 |
AT441938(T) |
申请公布日期 |
2009.09.15 |
申请号 |
AT20060830385T |
申请日期 |
2006.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MANDELMAN, JACK;CHENG, KANGGUO;HSU, LOUIS;YANG, HAINING |
分类号 |
H01L21/336;H01L21/285;H01L21/8234;H01L29/45;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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