发明名称 Method for protecting memory cells during programming
摘要 Improved circuitry and methods operate to protect the memory cells from potentially damaging electrical energy that can be imposed during programming of the memory cells. Additionally, the improved circuitry and methods operate to detect when programming of the memory cells has been achieved. The improved circuitry and methods are particularly useful for programming non-volatile memory cells. In one embodiment, the memory device pertains to a semiconductor memory product, such as a semiconductor memory chip or a portable memory card.
申请公布号 US7589989(B2) 申请公布日期 2009.09.15
申请号 US20060552441 申请日期 2006.10.24
申请人 SANDISK 3D LLC 发明人 FASOLI LUCA G.;THORP TYLER
分类号 G11C17/00 主分类号 G11C17/00
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