| 摘要 |
An operation method of a nonvolatile memory device is provided to remove influence in a program and data reading operation by confirming a leakage current of a bit line after packaging a nonvolatile memory device. A test for confirming a leakage current of a bit line is performed(S303). The bit line is read(S305). A leakage current of the bit line is tested in a controller(S307). Information of the bit line in which the leakage current is generated is stored to a storage unit(S309). An interface with the controller is finished(S311). A data input control or an error control is performed by using the information of the bit line in which the leakage current is generated when program or a read command is performed(S115). |
