| 摘要 |
<p>A method for fabricating an assist pattern is provided to secure a margin of manufacturing a mask without interference of a process margin, so it forming an assist pattern with a limit level. In a method for fabricating an assist pattern, a layout in which a main pattern(500) is arranged is designed. The assist pattern comprises a first assist pattern(505) and a second assist pattern. The first assist pattern is formed at both sides of the main pattern, and a second assist pattern is extended to the longitudinal direction from the end part of the first assist pattern. The first main patterns are arranged with each other in a main pattern part, and a second main pattern is arranged at the mask end part by a certain space from the first main pattern.</p> |
