| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to secure effective channel length by forming a gate pattern so that critical dimension of the gate electrode is larger than that of a control gate and a floating gate. In a semiconductor device and a method for manufacturing the same, a tunnel insulating layer, a floating gate conductive film(102), a dielectric film(103), a control gate conductive layer(104), and a gate electrode layer(106) are laminated on the semiconductor substrate(100) in order. A protective film(108) is formed on the sidewall of the gate electrode layer, and a protective film is composed of a nitride film or a dual structure of a nitride film and an oxide film. The critical dimension of the floating gate conductive film is larger than that of the gate conductive film.</p> |
