发明名称 |
Silicon controlled rectifier |
摘要 |
A silicon controlled rectifier structure with the symmetrical layout is provided. The N-type doped regions and the P-type doped regions are disposed with the N-well and symmetrically arranged relative to the isolation structure in-between, while the P-type buried layer is located under the N-type doped regions and the P-type doped regions and fully isolates the N-type doped regions from the N-well.
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申请公布号 |
US7589359(B1) |
申请公布日期 |
2009.09.15 |
申请号 |
US20080179858 |
申请日期 |
2008.07.25 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HWANG HSIN-YEN |
分类号 |
H01L29/32;H01L29/167;H01L29/207;H01L29/227;H01L29/423;H01L29/43;H01L29/47;H01L29/49;H01L29/74;H01L31/0288;H01L31/111 |
主分类号 |
H01L29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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