| 摘要 |
Methods for creating redistribution layers for only selected dice, such as known good dice, to form relatively thin semiconductor component assemblies and packages, and the assemblies and packages created by the methods, are disclosed. A sacrificial layer is deposited on a support substrate. An etch stop layer having a lower etch is deposited on the sacrificial layer. Redistribution lines in a dielectric material are formed on the support substrate on the etch stop layer. Semiconductor dice, either singulated or at the wafer level, are connected to the redistribution lines. The assembly may be scribed to allow the sacrificial layer to be etched to enable removal of the semiconductor dice and associated redistribution layer from the support substrate. The etch stop layer is removed to allow access to the redistribution lines for conductive bumping.
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